| PART |
Description |
Maker |
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ？的256Mbit4Mx4）DDR200-2-2）？
256Mbit (64Mx4) DDR333 (2.5-3-3)
256Mbit (16Mx16) DDR200 (2-2-2)
256Mbit (32Mx8) DDR200 (2-2-2)
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR266A (2-3-3)
256Mb (64Mx4) FBGA DDR266A (2-3-3)
256-Mbit Double Data Rate SDRAM/ Die Rev. B
256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http://
Infineon Technologies AG
Infineon Technologies A...
|
| V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY57V28820HCT-H HY57V28820HCLT-K |
x8 SDRAM
From old datasheet system
SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-L3M |
Mobile DDR SDRAM 256Mbit (16M x 16bit)
|
Hynix Semiconductor
|
| FAN2508 FAN2509S25 FAN2509S30 FAN2509S285 FAN2508X |
50 mA CMOS LDO Regulators
VOLT REGULATOR|FIXED| 2.5V|CMOS|TSOP|6PIN|PLASTIC
VOLT REGULATOR|FIXED| 3V|CMOS|TSOP|6PIN|PLASTIC
VOLT REGULATOR|FIXED| 2.85V|CMOS|TSOP|6PIN|PLASTIC
|
Fairchild Semiconductor
|
| HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life
256Mbit (64Mx4) DDR266A (2-3-3) ？的256Mbit4Mx4）DDR266A-3-3）？
|
Infineon Technologies AG
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
